View NTMSD6N303R2_3091343.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

? semiconductor components industries, llc, 2003 december, 2003 ? rev. 1 1 publication order number: NTMSD6N303R2/d NTMSD6N303R2 power mosfet 6 amps, 30 volts n?channel so?8 fetky the fetky product family incorporates low r ds(on) mosfets packaged with an industry leading, low forward drop, low leakage schottky barrier rectifier to offer high efficiency components in a space saving configuration. independent pinouts for mosfet and schottky die allow the flexibility to use a single component for switching and rectification functions in a wide variety of applications. applications ? buck converter ? buck?boost ? synchronous rectification ? low voltage motor control ? battery packs ? chargers ? cell phones mosfet maximum ratings (t j = 25 c unless otherwise noted) (note 1) rating symbol value unit drain?to?source voltage v dss 30 vdc drain?to?gate voltage (r gs = 1.0 m ) v dgr 30 vdc gate?to?source voltage ? continuous v gs 20 vdc drain current ? (note 2) ? continuous @ t a = 25 c ? single pulse (tp 10 s) i d i dm 6.0 30 adc apk total power dissipation @ t a = 25 c (note 2) p d 2.0 watts single pulse drain?to?source avalanche energy ? starting t j = 25 c (v dd = 30 vdc, v gs = 5.0 vdc, v ds = 20 vdc, i l = 9.0 apk, l = 10 mh, r g = 25 w ) e as 325 mj 1. pulse test: pulse width 250 s, duty cycle 2.0%. 2. mounted on 2 square fr4 board (1 sq. 2 oz. cu 0.06 thick single sided), 10 sec. max. device package shipping 2 ordering information NTMSD6N303R2 so?8 2500/tape & reel so?8 case 751 style 18 1 8 2 anode anode source gate 3 4 1 7 6 5 8 cathode cathode drain drain (top view) marking diagram & pin assignments e6n303 lyww e6n303 = device code l = assembly location y = year ww = work week 1 2 3 4 8 7 6 5 a a s g c c d d (top view) mosfet 6.0 amperes 30 volts 24 m @ v gs = 10 v (typ) schottky diode 6.0 amperes 30 volts 420 mv @ i f = 3.0 a http://onsemi.com 2for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d.
NTMSD6N303R2 http://onsemi.com 2 schottky rectifier maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit peak repetitive reverse voltage dc blocking voltage v rrm v r 30 volts average forward current (note 3) (rated v r ) t a = 104 c i o 2.0 amps peak repetitive forward current (note 3) (rated v r , square wave, 20 khz) t a = 108 c i frm 4.0 amps non?repetitive peak surge current (surge applied at rated load conditions, halfwave, single phase, 60 hz) i fsm 30 amps thermal characteristics ? schottky and mosfet thermal resistance ? junction?to?ambient (note 4) ? mosfet r q ja 167 c/w thermal resistance ? junction?to?ambient (note 5) ? mosfet r q ja 97 c/ thermal resistance ? junction?to?ambient (note 3) ? mosfet r q ja 62.5 thermal resistance ? junction?to?ambient (note 4) ? schottky r q ja 197 thermal resistance ? junction?to?ambient (note 5) ? schottky r q ja 97 thermal resistance ? junction?to?ambient (note 3) ? schottky r q ja 62.5 operating and storage temperature range t j , t stg ?55 to +150 schottky rectifier electrical characteristics (t c = 25 c unless otherwise noted) characteristics symbol value unit maximum instantaneous forward voltage (note 6) v f t j = 25 c t j = 125 c volts i f = 100 madc i f = 3.0 adc i f = 6.0 adc 0.28 0.42 0.50 0.13 0.33 0.45 maximum instantaneous reverse current (note 6) v 30 v i r t j = 25 c t j = 125 c () v r = 30 v 250 ? ? 25 a ma maximum voltage rate of change v r = 30 v dv/dt 10,000 v/ s 3. mounted on 2 square fr4 board (1 sq. 2 oz. cu 0.06 thick single sided), 10 sec. max. 4. mounted with minimum recommended pad size, pc board fr4. 5. mounted on 2 square fr4 board (1 sq. 2 oz. cu 0.06 thick single sided), steady state. 6. pulse test: pulse width 300 s, duty cycle 2.0%
NTMSD6N303R2 http://onsemi.com 3 mosfet electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain?to?source breakdown voltage (v gs = 0 vdc, i d = 250 m a) temperature coefficient (positive) v (br)dss 30 ? ? 30 ? ? vdc mv/ c zero gate voltage drain current (v ds = 24 vdc, v gs = 0 vdc, t j = 25 c) (v ds = 24 vdc, v gs = 0 vdc, t j = 125 c) i dss ? ? ? ? 1.0 20 m adc gate?body leakage current (v gs = 20 vdc, v ds = 0 vdc) i gss ? ? 100 nadc on characteristics (note 7) gate threshold voltage (v ds = v gs , i d = 250 m adc) temperature coefficient (negative) v gs(th) 1.0 ? 1.8 4.6 2.5 ? vdc mv/ c static drain?to?source on?state resistance (v gs = 10 vdc, i d = 6 adc) (v gs = 4.5 vdc, i d = 3.9 adc) r ds(on) ? ? 0.024 0.030 0.032 0.040 w forward transconductance (v ds = 15 vdc, i d = 5.0 adc) g fs ? 10 ? mhos dynamic characteristics input capacitance (v 24 vd v 0vd c iss ? 680 950 pf output capacitance (v ds = 24 vdc, v gs = 0 vdc, f = 1.0 mhz ) c oss ? 210 300 reverse transfer capacitance f = 1 . 0 mhz) c rss ? 70 135 switching characteristics (notes 7 & 8) turn?on delay time t d(on) ? 9 18 ns rise time (v dd = 15 vdc, i d = 1 a, v gs =10v t r ? 22 40 turn?off delay time v gs = 10 v, r g = 6 w ) t d(off) ? 45 80 fall time r g 6 w ) t f ? 45 80 turn?on delay time t d(on) ? 13 30 ns rise time (v dd = 15 vdc, i d = 1 a, v gs =45v t r ? 27 50 turn?off delay time v gs = 4.5 v, r g = 6 w ) t d(off) ? 22 40 fall time r g 6 w ) t f ? 34 70 gate charge q t ? 19 30 nc (v ds = 15 vdc, v gs =10vdc q 1 ? 2.4 ? v gs = 10 vdc, i d = 5 a) q 2 ? 5.0 ? i d 5 a) q 3 ? 4.3 ? body?drain diode ratings (note 7) diode forward on?voltage (i s = 1.7 adc, v gs = 0 v) (i s = 1.7 adc, v gs = 0 v, t j = 150 c) v sd ? ? 0.75 0.62 1.0 ? vdc reverse recovery time (i 5a v 0v t rr ? 26 ? ns (i s = 5 a, v gs = 0 v, di s /dt = 100 a/ m s ) t a - 11 - di s /dt = 100 a/ m s) t b ? 15 ? reverse recovery stored charge (i s = 5 a, di s /dt = 100 a/ s, v gs = 0 v) q rr ? 0.015 ? m c 7. pulse test: pulse width 300 m s, duty cycle 2%. 8. switching characteristics are independent of operating junction temperature.
NTMSD6N303R2 http://onsemi.com 4 typical mosfet electrical characteristics 1.8 1.6 0.8 1.2 0.6 100 10 10,000 0 10 2 4 0.4 0.2 v ds , drain?to?source voltage (volts) i d , drain current (amps) 0 v gs , gate?to?source voltage (volts) figure 1. on?region characteristics figure 2. transfer characteristics i d , drain current (amps) 1 0.04 0.03 0.025 7 6 5 0.02 0.015 0.01 28 figure 3. on?resistance versus drain current and temperature i d , drain current (amps) figure 4. on?resistance versus drain current and gate voltage i d , drain current (amps) r ds(on) , drain?to?source resistance ( w ) r ds(on) , drain?to?source resistance ( w ) figure 5. on?resistance variation with temperature t j , junction temperature ( c) figure 6. drain?to?source leakage current versus voltage v ds , drain?to?source voltage (volts) r ds(on) , drain?to?source resistance (normalized) i dss , leakage (na) ?50 0 ?25 50 25 04 2 15 01520 10 30 5 2 6 8 v ds 10 v t j = 25 c t j = ?55 c t j = 125 c 150 i d = 3 a v gs = 10 v 12 0.045 0.05 v gs = 2.6 v v gs = 10 1 1.2 1.4 1.8 10 4 0 2 6 8 12 1 0.04 0.035 0.03 6 5 4 0.02 0.015 0.01 312 0.045 0.05 1000 t j = 25 c t j = 25 c 0.8 0.6 1.6 10 v 6 v 4 v 3.6 v 3.4 v 3.8 v 3.2 v 3 v 2.8 v 3 34 10 91112 0.035 t = 125 c t = ?55 c t = 25 c 211 10 9 8 7 0.025 v gs = 4.5 v v gs = 10 v 1 100 75 125 1.4 25 v gs = 0 v t j = 150 c t j = 125 c
NTMSD6N303R2 http://onsemi.com 5 10 15 20 10 5 50 25 1200 1000 800 600 400 200 0 325 200 25 0 6 4 0 gate?to?source or drain?to?source voltage (volts) figure 7. capacitance variation figure 8. gate?to?source and drain?to?source voltage versus total charge c, capacitance (pf) figure 9. resistive switching time variation versus gate resistance figure 10. diode forward voltage versus current v sd , source?to?drain voltage (volts) i s , source current (amps) figure 11. maximum rated forward biased safe operating area figure 12. maximum avalanche energy versus starting junction temperature t j , starting junction temperature ( c) e as , single pulse drain?to?source avalanche energy (mj) 0.5 25 125 150 100 75 50 c rss c iss c oss c rss 1 0.6 v gs = 0 v t j = 25 c 100 125 250 t j = 25 c i d = 6 a v ds = 0 v v gs v ds 1400 1600 v gs = 0 v c iss i d = 6 a t j = 25 c v gs q 2 q 1 q t v ds 30 0 20 10 6 0 q g , total gate charge (nc) v gs , gate?to?source voltage (volts) 0816 10 8 4 2 246 101214 1000 100 1 r g , gate resistance ( w ) t, time (ns) 1 100 10 10 v dd = 15 v i d = 6 a v gs = 10 v t r t d(off) t d(on) t f 50 75 150 175 225 275 300 0.1 v ds , drain?to?source voltage (volts) 0.1 0.01 1.0 10 1 100 10 100 r ds(on) limit thermal limit package limit dc v gs = 12 v single pulse t c = 25 c mounted on 2 sq. fr4 board (1 sq. 2 oz. cu 0.06 thick single sided) with one die operating, 10 s max. 10 ms 1.0 ms i d , drain current (amps) 0.7 0.8 0.9 2 3 5 18 20 v ds , drain?to?source voltage (volts) q 3
NTMSD6N303R2 http://onsemi.com 6 typical fet electrical characteristics figure 13. fet thermal response figure 14. diode reverse recovery waveform di/dt t rr t a t p i s 0.25 i s time i s t b t, time (s) rthja(t), effective transient thermal resistance 1.0 0.1 d = 0.5 single pulse 0.00001 0.0001 0.001 0.01 0.1 1.0 10 0.2 0.1 0.05 0.02 0.01 100 1000 0.001 0.01 chip junction 0.0106 0.0253 f 0.0431 0.1406 f 0.1643 0.5064 f 0.3507 2.9468 f 0.4302 177.14 f ambient typical schottky electrical characteristics t j = 125 c figure 15. typical forward voltage figure 16. maximum forward voltage 0.7 0.1 v f , instantaneous forward voltage (volts) 10 1.0 v f , maximum instantaneous forward voltage (volts) 0. 8 0 1.0 0.1 i f , instantaneous forward current (amps) 0.1 0.4 0.2 0.3 0.5 0.6 0.2 0.3 0.4 0.5 10 i f , instantaneous forward current (amps) 0.6 0.7 85 c 25 c -40 c t j = 125 c 25 c 85 c 0.1
NTMSD6N303R2 http://onsemi.com 7 typical schottky electrical characteristics figure 17. typical reverse current figure 18. maximum reverse current figure 19. typical capacitance figure 20. current derating figure 21. forward power dissipation 15 30 0 v r , reverse voltage (volts) 0.1 0.001 0.01 0.0001 15 20 0 v r , reverse voltage (volts) 1000 100 10 t a , ambient temperature ( c) 20 0 5.0 2.0 1.5 1.0 0.5 0 40 0 i o , average forward current (amps) 1.25 1.00 0.75 0.50 0.25 0 1.0 i r , reverse current (amps) 0.00001 0.000001 5.0 10 5.0 10 60 80 100 120 140 160 , average power dissipation (watts) p fo 2.0 3.0 c, capacitance (pf) i , average forward current (amps) o 5.0 1.50 1.75 15 30 0 v r , reverse voltage (volts) 0.1 0.001 0.01 0.0001 i r , maximum reverse current (amps) 0.00001 0.000001 5.0 10 3.0 3.5 4.0 square wave dc i pk /i o = 5.0 i pk /i o = i pk /i o = 10 i pk /i o = 20 t j = 125 c 25 c t j = 125 c 25 c 85 c freq = 20 khz dc square wave i pk /i o = 5.0 i pk /i o = i pk /i o = 10 i pk /i o = 20 20 25 20 25 2.5 4.5 4.0 25 30
NTMSD6N303R2 http://onsemi.com 8 typical schottky electrical characteristics figure 22. schottky thermal response t, time (s) rthja(t), effective transient thermal resistance 1.0 0.1 d = 0.5 single pulse 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.2 0.1 0.02 1.0e+02 1.0e+03 0.001 0.01 normalized to r ja at steady state (1 pad) chip junction 0.1010 39.422 f 1.2674 493.26 f 27.987 0.0131 f 30.936 0.2292 f 36.930 2.267 f ambient 0.05 0.01 typical applications load v out c o + - v in + - load v out c o + - v in + - l o l o step down switching regulators buck regulator synchronous buck regulator
NTMSD6N303R2 http://onsemi.com 9 typical applications load v out c o + - v in + - load v out c o + - v in + - step up switching regulators boost regulator buck?boost regulator l1 q1 v in + - multiple battery chargers batt #1 batt #2 d2 d3 q2 q3 buck regulator/charger c o l o q1 d1
NTMSD6N303R2 http://onsemi.com 10 typical applications li?lon battery pack applications battery pack discharge charge smart ic li-ion battery cells pack + pack - schottky schottky q1 q2 ? applicable in battery packs which require a high current level. ? during charge cycle q2 is on and q1 is off. schottky can reduce power loss during fast charge. ? during discharge q1 is on and q2 is off. again, schottky can reduce power dissipation. ? under normal operation, both transistors are on.
NTMSD6N303R2 http://onsemi.com 11 package dimensions so?8 case 751?07 issue aa *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* seating plane 1 4 5 8 n j x 45 k notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 3. dimension a and b do not include mold protrusion. 4. maximum mold protrusion 0.15 (0.006) per side. 5. dimension d does not include dambar protrusion. allowable dambar protrusion shall be 0.127 (0.005) total in excess of the d dimension at maximum material condition. 6. 751-01 thru 751-06 are obsolete. new standard is 751-07. a b s d h c 0.10 (0.004) dim a min max min max inches 4.80 5.00 0.189 0.197 millimeters b 3.80 4.00 0.150 0.157 c 1.35 1.75 0.053 0.069 d 0.33 0.51 0.013 0.020 g 1.27 bsc 0.050 bsc h 0.10 0.25 0.004 0.010 j 0.19 0.25 0.007 0.010 k 0.40 1.27 0.016 0.050 m 0 8 0 8 n 0.25 0.50 0.010 0.020 s 5.80 6.20 0.228 0.244 ?x? ?y? g m y m 0.25 (0.010) ?z? y m 0.25 (0.010) z s x s m 1.52 0.060 7.0 0.275 0.6 0.024 1.270 0.050 4.0 0.155 scale 6:1 mm inches style 18: pin 1. anode 2. anode 3. source 4. gate 5. drain 6. drain 7. cathode 8. cathode
NTMSD6N303R2 http://onsemi.com 12 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 NTMSD6N303R2/d fetky is a trademark of international rectifier corporation. literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.

▲Up To Search▲

Price & Availability of NTMSD6N303R2

	To Download NTMSD6N303R2 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .